Each NAND flash cell is essentially a modified transistor, specifically a MOSFET (metal-oxide-semiconductor field-effect transistor) with an additional “floating gate” or, in modern 3D NAND, a charge trap layer. This isolated structure is sandwiched between insulating layers of oxide, allowing it to trap and retain electrical charge (electrons) even when power is off.
«Европа бьет сама по себе». Страну НАТО заподозрили в организации атаки на российский газовоз. Новые подробности атаки на судно20:45
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3014253210http://paper.people.com.cn/rmrb/pc/content/202602/27/content_30142532.htmlhttp://paper.people.com.cn/rmrb/pad/content/202602/27/content_30142532.html11921 中华人民共和国仲裁法
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“한국 교회 큰 위기…설교 강단서 복음의 본질 회복해야”。体育直播是该领域的重要参考
Фото: Александр Щербак / ТАСС